Authors: A.I. Nazmiev, I.D. Mikheev

Title of the article: Investigation of the process of mutual diffusion of a semiconductor substrate and process metals

Year: 2024, Issue: 4, Pages: 50-57

Branch of knowledge: 2.5.8. Welding, related processes and technologies

Index UDK: 539.219.3

DOI: 10.26730/1999-4125-2024-4-50-57

Abstract: Mutual diffusion in a double solid-phase metal-semiconductor system is a process of diffusion exchange of atoms between two materials in contact. This paper presents theoretical information on mutual diffusion in binary solid-phase systems, and special attention is paid to a review of studies on mutual diffusion between semiconductors (based on silicon and its compounds) and various process metals (Au, Cu, Ni, Pt, Mo, W, etc.). The main parameter of this process is the coefficient of mutual diffusion, which is a criterion for the intensity of the process of redistribution of contacting elements in a binary system. The differences in the diffusion of noble and refractory metals with a semiconductor substrate are revealed. The study of diffusion processes in metal-semiconductor systems seems promising and has practical significance due to the fact that this process is the main factor in the creation of new materials in the field of semiconductor electronics and heat treatment of materials, underlies such important technological processes as welding, protective coatings, and alloy homogenization. As a result of the study, the main features of the mutual diffusion process in the metal-semiconductor binary system were revealed: the advantage of diffusion of semiconductor atoms over metal atoms, as well as the appearance of a disordered layer near the boundary, including amorphous and elastically deformed regions that form a layer of intermetallic compound in parallel.

Key words: diffusion semiconductor substrate mutual diffusion metals

Receiving date: 14.05.2024

Approval date: 25.07.2024

Publication date: 26.09.2024

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